MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C
| dc.citation.epage | 803 | en_US |
| dc.citation.spage | 799 | en_US |
| dc.citation.volume | 358 | en_US |
| dc.contributor.author | CHENG, KL | en_US |
| dc.contributor.author | LIU, CC | en_US |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.author | LEE, CY | en_US |
| dc.contributor.author | YEW, TR | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:43Z | |
| dc.date.available | 2014-12-08T15:27:43Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.isbn | 1-55899-259-6 | en_US |
| dc.identifier.issn | 0272-9172 | en_US |
| dc.identifier.journal | MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19967 | |
| dc.identifier.wosnumber | WOS:A1995BC88M00122 | |
| dc.language.iso | en_US | en_US |
| dc.title | MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C | en_US |
| dc.type | Proceedings Paper | en_US |
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