REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
| dc.citation.epage | 299 | en_US |
| dc.citation.spage | 295 | en_US |
| dc.citation.volume | 344 | en_US |
| dc.contributor.author | WU, JW | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | LIN, KC | en_US |
| dc.contributor.author | CHANG, EY | en_US |
| dc.contributor.author | HWANG, JH | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:27:51Z | |
| dc.date.available | 2014-12-08T15:27:51Z | |
| dc.date.issued | 1994 | en_US |
| dc.identifier.isbn | 1-55899-244-8 | en_US |
| dc.identifier.issn | 0272-9172 | en_US |
| dc.identifier.journal | MATERIALS AND PROCESSES FOR ENVIRONMENTAL PROTECTION | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20111 | |
| dc.identifier.wosnumber | WOS:A1994BC30J00041 | |
| dc.language.iso | en_US | en_US |
| dc.title | REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2 | en_US |
| dc.type | Proceedings Paper | en_US |
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