FIELD EFFECT TRANSISTOR STRUCTURE

Abstract

A field effect transistor (FET) structure includes a substrate, an internal gate, an insulation layer, a semiconductor strip, a gate dielectric insulator, and a gate conductor. The internal gate includes a floor portion located on the substrate and a wall portion extending from the floor portion. The insulation layer is located on the floor portion of the internal gate. The semiconductor strip is located on the wall portion and a portion of the insulation layer, and the semiconductor strip includes source/drain regions and a channel region adjacent to the source/drain regions. The gate dielectric insulator is located on the channel region. The gate conductor is located on the gate dielectric insulator.