FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
| dc.citation.patentcountry | USA | en_US |
| dc.citation.patentnumber | 20170125415 | en_US |
| dc.contributor.author | Chao-Hsin CHIEN | en_US |
| dc.contributor.author | Chen-Han CHOU | en_US |
| dc.contributor.author | Cheng-Ting CHUNG | en_US |
| dc.contributor.author | Samuel C. PAN | en_US |
| dc.date.accessioned | 2019-04-11T05:42:42Z | |
| dc.date.available | 2019-04-11T05:42:42Z | |
| dc.date.issued | 2017-05-04 | en_US |
| dc.description.abstract | A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction. | en_US |
| dc.identifier.govdoc | H01L027/088 | en_US |
| dc.identifier.govdoc | H01L029/08 | en_US |
| dc.identifier.govdoc | H01L027/02 | en_US |
| dc.identifier.govdoc | H01L021/8234 | en_US |
| dc.identifier.govdoc | H01L029/78 | en_US |
| dc.identifier.govdoc | H01L029/06 | en_US |
| dc.identifier.govdoc | H01L029/423 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/151271 | |
| dc.language.iso | en_US | en_US |
| dc.title | FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH | en_US |
| dc.type | Patents | en_US |