短通道V型場效電晶體研製和其電氣特性

Abstract

Short channel n-VMOS and p-VMOS field effect transistors are designed fabricated by using anisotropic etching solution of hydrazine and water mixture. The modified first order theory is developed for V-groove MOS structure to account for the non-uniform gate oxide thickness. It is found that the developed theory is in excellent agreement with the experimental data. VMOS fabrication techniques are discussed and the electrical properties of the fabricated discrete n-VMOS and p-VMOS devices are measured and examined.