A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver

dc.citation.epage	155	en_US
dc.citation.spage	152	en_US
dc.contributor.author	Wu, Hui-I.	en_US
dc.contributor.author	Hsiung, Zi Hao	en_US
dc.contributor.author	Jou, Christina F.	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.date.accessioned	2014-12-08T15:12:45Z
dc.date.available	2014-12-08T15:12:45Z
dc.date.issued	2007	en_US
dc.description.abstract	An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.	en_US
dc.identifier.isbn	978-1-934142-00-4	en_US
dc.identifier.journal	Piers 2007 Beijing: Progress in Electromagnetics Research Symposium, Pts I and II, Proceedings	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9812
dc.identifier.wosnumber	WOS:000246922600031
dc.language.iso	en_US	en_US
dc.title	A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver	en_US
dc.type	Proceedings Paper	en_US

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