新世代三五族金氧半電晶體元件
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系(所) | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:36Z | |
| dc.date.available | 2014-12-13T10:46:36Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2923-E009-002-MY3 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1817061&docId=303672 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100841 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新世代三五族金氧半電晶體元件 | zh_TW |
| dc.title | III-V MOSFET for Next Generation | en_US |
| dc.type | Plan | en_US |
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