金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)
| dc.contributor.author | 荊鳳德 | en_US |
| dc.contributor.author | CHIN ALBERT | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:48:59Z | |
| dc.date.available | 2014-12-13T10:48:59Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC98-2120-M009-005 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1892668&docId=313302 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101497 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II) | zh_TW |
| dc.title | Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (II) | en_US |
| dc.type | Plan | en_US |