Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB
| dc.citation.epage | 400 | en_US |
| dc.citation.spage | 399 | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Lin, GR | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Chi, JY | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:37Z | |
| dc.date.available | 2014-12-08T15:25:37Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB. | en_US |
| dc.identifier.isbn | 0-7803-9217-5 | en_US |
| dc.identifier.issn | 1092-8081 | en_US |
| dc.identifier.journal | 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18020 | |
| dc.identifier.wosnumber | WOS:000235109700202 | |
| dc.language.iso | en_US | en_US |
| dc.subject | quantum dots | en_US |
| dc.subject | surface emitting laser | en_US |
| dc.subject | single mode | en_US |
| dc.subject | bandwidth | en_US |
| dc.title | Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB | en_US |
| dc.type | Proceedings Paper | en_US |
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