OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20110089467 | zh_TW |
| dc.contributor.author | CHANG, Edward Yi | en_US |
| dc.contributor.author | KUO, Chien-I | en_US |
| dc.contributor.author | CHANG, Chun-Yen | en_US |
| dc.date.accessioned | 2014-12-16T06:15:25Z | |
| dc.date.available | 2014-12-16T06:15:25Z | |
| dc.date.issued | 2011-04-21 | en_US |
| dc.description.abstract | Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased. | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/335 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105312 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | zh_TW |
| dc.type | Patents | en_US |