Method for forming an interfacial passivation layer on the Ge semiconductor
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08071458 | zh_TW |
| dc.contributor.author | Liu Po-Tsun | en_US |
| dc.contributor.author | Huang Chen-Shuo | en_US |
| dc.contributor.author | Huang Yi-Ling | en_US |
| dc.contributor.author | Cheng Szu-Lin | en_US |
| dc.contributor.author | Sze Simon M. | en_US |
| dc.contributor.author | Nishi Yoshio | en_US |
| dc.date.accessioned | 2014-12-16T06:14:17Z | |
| dc.date.available | 2014-12-16T06:14:17Z | |
| dc.date.issued | 2011-12-06 | en_US |
| dc.description.abstract | The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process. | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104626 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for forming an interfacial passivation layer on the Ge semiconductor | zh_TW |
| dc.type | Patents | en_US |