Strong Enhancements in Output Power and High-Speed Data Transmission Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chi, Kai-Lun | en_US |
| dc.contributor.author | Chen, Xin-Nan | en_US |
| dc.contributor.author | Chen, Jye-Hong | en_US |
| dc.contributor.author | Bowers, J. E. | en_US |
| dc.contributor.author | Yang, Ying-Jay | en_US |
| dc.contributor.author | Shi, Jin-Wei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:20Z | |
| dc.date.available | 2017-04-21T06:49:20Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-to-optical bandwidth (similar to 25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference. | en_US |
| dc.identifier.isbn | 978-4-8855-2306-9 | en_US |
| dc.identifier.issn | 2326-5442 | en_US |
| dc.identifier.journal | 2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134573 | |
| dc.identifier.wosnumber | WOS:000392249800056 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Strong Enhancements in Output Power and High-Speed Data Transmission Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs | en_US |
| dc.type | Proceedings Paper | en_US |
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