Process induced instability and reliability issues in low temperature poly-Si thin film transistors
| dc.citation.epage | 714 | en_US |
| dc.citation.spage | 713 | en_US |
| dc.contributor.author | Chen, Chih-Yang | en_US |
| dc.contributor.author | Wang, Shen-De | en_US |
| dc.contributor.author | Shieh, Ming-Shan | en_US |
| dc.contributor.author | Chen, Wei-Cheng | en_US |
| dc.contributor.author | Lin, Hsiao-Yi | en_US |
| dc.contributor.author | Yeh, Kuan-Lin | en_US |
| dc.contributor.author | Lee, Jam-Wen | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:06Z | |
| dc.date.available | 2014-12-08T15:25:06Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | We investigated the impact of plasma process on the devices' performance and reliability degradation of low temperature poly-Si thin film transistors (LTPS TFTs). LTPS TFTs with different antenna areas were used to study the effects of the plasma etching process on the devices. The larger TFT antenna area, the more performance instability occurs. The reliability of LTPS TFTs with large antenna areas was found to be degraded from gate bias stress and hot carrier stress. | en_US |
| dc.identifier.doi | 10.1109/RELPHY.2006.251338 | en_US |
| dc.identifier.isbn | 0-7803-9498-4 | en_US |
| dc.identifier.journal | 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.2006.251338 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17481 | |
| dc.identifier.wosnumber | WOS:000240855800153 | |
| dc.language.iso | en_US | en_US |
| dc.title | Process induced instability and reliability issues in low temperature poly-Si thin film transistors | en_US |
| dc.type | Proceedings Paper | en_US |