High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08563974 | zh_TW |
| dc.contributor.author | Liu Po-Tsun | en_US |
| dc.contributor.author | Chou Yi-Teh | en_US |
| dc.contributor.author | Teng Li-Feng | en_US |
| dc.contributor.author | Fu Chur-Shyang | en_US |
| dc.contributor.author | Shieh Han-Ping | en_US |
| dc.date.accessioned | 2014-12-16T06:13:58Z | |
| dc.date.available | 2014-12-16T06:13:58Z | |
| dc.date.issued | 2013-10-22 | en_US |
| dc.description.abstract | The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction. | zh_TW |
| dc.identifier.govdoc | H01L029/10 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104430 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | High-gain complementary inverter with ambipolar thin film transistors and fabrication thereof | zh_TW |
| dc.type | Patents | en_US |