Characteristics of novel polysilicon oxide by anodic oxidation
| dc.citation.epage | 238 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 235 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.contributor.author | Yeh, CF | en_US |
| dc.contributor.author | Liu, JS | en_US |
| dc.contributor.author | Chiang, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:14Z | |
| dc.date.available | 2014-12-08T15:46:14Z | |
| dc.date.issued | 1999-09-01 | en_US |
| dc.description.abstract | For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional thermal polyoxide. The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabilities. | en_US |
| dc.identifier.doi | 10.1016/S0167-9317(99)00378-0 | en_US |
| dc.identifier.issn | 0167-9317 | en_US |
| dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0167-9317(99)00378-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31100 | |
| dc.identifier.wosnumber | WOS:000083250300053 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of novel polysilicon oxide by anodic oxidation | en_US |
| dc.type | Article; Proceedings Paper | en_US |