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以HVPE成長之氮化鎵單晶基板的攙雜研究

dc.contributor.author施敏en_US
dc.contributor.authorSZE SIMON MINen_US
dc.contributor.department交通大學電子工程系zh_TW
dc.date.accessioned2014-12-13T10:37:53Z
dc.date.available2014-12-13T10:37:53Z
dc.date.issued1998en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC87-2215-E009-068zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=409119&docId=72438en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/94914
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject氫化物磊晶成長zh_TW
dc.subject摻雜zh_TW
dc.subject藍光發光二極體zh_TW
dc.subject基板zh_TW
dc.subjectGaNen_US
dc.subjectHVPEen_US
dc.subjectDopanten_US
dc.subjectBlue LEDen_US
dc.subjectSubstrateen_US
dc.title以HVPE成長之氮化鎵單晶基板的攙雜研究zh_TW
dc.titleResearch on the Dopant in GaN Substrate Grown by HVPEen_US
dc.typePlanen_US

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