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Binding energy of magneto-biexcitons in semiconductor nano-rings

dc.citation.epage1153en_US
dc.citation.issue2en_US
dc.citation.spage1149en_US
dc.citation.volume3en_US
dc.contributor.authorThu, L. M.en_US
dc.contributor.authorChiu, W. T.en_US
dc.contributor.authorXue, Shao-Fuen_US
dc.contributor.authorLin, Ta-Chunen_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:39:50Z
dc.date.available2014-12-08T15:39:50Z
dc.date.issued2010en_US
dc.description.abstractWe report a simulation on the magneto-biexciton system of asymmetrical InAs/GaAs nano-rings, using a smooth three dimensional confinement potential which realistically describes electronic properties of the rings. In our calculation, we use the Hartree approximation to calculate the self-consistent energy for exciton and biexciton confined in the system. We simulate recombination energy, binding energy and their diamagnetic shifts and compare those results with experimental data obtained from the magneto-photoluminescence measurement. We found that using the realistic geometry and composition of the asymmetric nano-ring in our simulations we are able to reproduce experimental data with good accuracy.en_US
dc.identifier.doi10.1016/j.phpro.2010.01.154en_US
dc.identifier.issn1875-3892en_US
dc.identifier.journalPROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.phpro.2010.01.154en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27220
dc.identifier.wosnumberWOS:000275915400008
dc.language.isoen_USen_US
dc.subjectmagnetoexcitonsen_US
dc.subjectnano ringsen_US
dc.subjectdiamagnetic shiften_US
dc.titleBinding energy of magneto-biexcitons in semiconductor nano-ringsen_US
dc.typeProceedings Paperen_US

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