HIGH-PERFORMANCE SINGLE-PHASE FULL-BRIDGE INVERTER USING GALLIUM NITRIDE FIELD EFFECT TRANSISTORS
| dc.contributor.author | Wu, Chih-Chiang | en_US |
| dc.contributor.author | Jeng, Shyr-Long | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.date.accessioned | 2018-08-21T05:56:49Z | |
| dc.date.available | 2018-08-21T05:56:49Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | This paper presents the perfonnance of a single-phase full-bridge inverter based on wide-bandgap devices. The control strategy for the full-bridge inverter applies unipolar sinusoidal pulse width modulation. The experimental results demonstrated that a smaller figure of merit is preferred for a more efficient design; specifically, the full-bridge inverter using gallium nitride field effect transistors inside could easily reach 96% efficiency or more within a 100- to 1000-W range. | en_US |
| dc.identifier.journal | 2017 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2017) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146683 | |
| dc.identifier.wosnumber | WOS:000404176400166 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | HIGH-PERFORMANCE SINGLE-PHASE FULL-BRIDGE INVERTER USING GALLIUM NITRIDE FIELD EFFECT TRANSISTORS | en_US |
| dc.type | Proceedings Paper | en_US |
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