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Spectral Analysis of Noise Sources in InGaN Light Emitting Diodes

dc.contributor.authorLin, Grayen_US
dc.contributor.authorSu, Kuan-Linen_US
dc.contributor.authorYang, Shih-Tsunen_US
dc.contributor.authorChen, Tzung-Teen_US
dc.contributor.authorChen, Chiu-Lingen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:21:05Z
dc.date.available2014-12-08T15:21:05Z
dc.date.issued2011en_US
dc.description.abstractNoise characterization of InGaN light emitting diodes shows that the exponent in current dependence of low-frequency flicker noise amplitude and the corner frequency in high-frequency generation-recombination noise spectra are two possible indicators for device reliability. (C) 2010 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-910-7en_US
dc.identifier.journal2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/14990
dc.identifier.wosnumberWOS:000295612403200
dc.language.isoen_USen_US
dc.titleSpectral Analysis of Noise Sources in InGaN Light Emitting Diodesen_US
dc.typeProceedings Paperen_US

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