Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
| dc.citation.epage | 72 | en_US |
| dc.citation.spage | 71 | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.author | Lu, Chi-Pei | en_US |
| dc.contributor.author | Liu, Hsiao-Han | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:17Z | |
| dc.date.available | 2014-12-08T15:48:17Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | Modified Schottky Barrier MOSFET with low resistance metal source/drain and good short channel effect immunity is one of the promising nano-scale device structures. In this work, a modified external load resistance method was proposed to extract the bias dependent source injection resistance of the MSB multi-gate MOSFET. The injection resistance is exponentially proportional to (V(GS)-V(th)-0.5V(DS)) and would be close to the source/drain resistance of conventional MOSFET at high gate bias. | en_US |
| dc.identifier.isbn | 978-1-4244-2071-1 | en_US |
| dc.identifier.journal | 2008 IEEE SILICON NANOELECTRONICS WORKSHOP | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32198 | |
| dc.identifier.wosnumber | WOS:000279102800037 | |
| dc.language.iso | en_US | en_US |
| dc.title | Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET | en_US |
| dc.type | Article | en_US |
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