Ion-channeling studies of InAs/GaAs quantum dots
| dc.citation.epage | 474 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 470 | en_US |
| dc.citation.volume | 241 | en_US |
| dc.contributor.author | Niu, H | en_US |
| dc.contributor.author | Chen, CH | en_US |
| dc.contributor.author | Wang, HY | en_US |
| dc.contributor.author | Wu, SC | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:00Z | |
| dc.date.available | 2014-12-08T15:18:00Z | |
| dc.date.issued | 2005-12-01 | en_US |
| dc.description.abstract | Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along < 001 > growth direction and < 011 > direction will be presented and discussed briefly. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.nimb.2005.07.094 | en_US |
| dc.identifier.issn | 0168-583X | en_US |
| dc.identifier.journal | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.nimb.2005.07.094 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13010 | |
| dc.identifier.wosnumber | WOS:000234260000099 | |
| dc.language.iso | en_US | en_US |
| dc.subject | quantum dots | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | InAs | en_US |
| dc.subject | ion-channeling | en_US |
| dc.title | Ion-channeling studies of InAs/GaAs quantum dots | en_US |
| dc.type | Article; Proceedings Paper | en_US |