斷能隙N型GaAsb/P型InAs異質結構載子傳輸效應之研究

dc.contributor.author	陳衛國	en_US
dc.contributor.author	WEI-KUOCHEN	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
dc.date.accessioned	2014-12-13T10:38:18Z
dc.date.available	2014-12-13T10:38:18Z
dc.date.issued	1997	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC86-2112-M009-005	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=288134&docId=52407	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95221
dc.language.iso	zh_TW	en_US
dc.subject	斷帶能隙	zh_TW
dc.subject	負電阻	zh_TW
dc.subject	二維電子氣	zh_TW
dc.subject	二維電洞氣	zh_TW
dc.subject	Broken gap	en_US
dc.subject	Negative differential resistance	en_US
dc.subject	Two dimensional electron gas	en_US
dc.subject	Two dimensional hole gas	en_US
dc.subject	n-GaSb/P-InAs	en_US
dc.title	斷能隙N型GaAsb/P型InAs異質結構載子傳輸效應之研究	zh_TW
dc.title	Study of Carrier Transport of n-GaSb/p-InAs Broken Bandgap Heterostructure	en_US
dc.type	Plan	en_US

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