Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell
| dc.citation.epage | 145 | en_US |
| dc.citation.spage | 143 | en_US |
| dc.contributor.author | Wang, Hsun-Wen | en_US |
| dc.contributor.author | Yu, Pei-Chen | en_US |
| dc.contributor.author | Han, Hau-Vei | en_US |
| dc.contributor.author | Lin, Chien-Chung | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Lin, Shiuan-Huei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:45Z | |
| dc.date.available | 2014-12-08T15:30:45Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.. | en_US |
| dc.identifier.isbn | 978-1-4673-4841-6 | en_US |
| dc.identifier.issn | 2159-3523 | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21971 | |
| dc.identifier.wosnumber | WOS:000319409400044 | |
| dc.language.iso | en_US | en_US |
| dc.title | Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell | en_US |
| dc.type | Proceedings Paper | en_US |
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