Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
| dc.citation.epage | 156 | en_US |
| dc.citation.spage | 151 | en_US |
| dc.citation.volume | 5737 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Chang, YA | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Chu, JT | en_US |
| dc.contributor.author | Tsai, MY | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2019-04-03T06:47:15Z | |
| dc.date.available | 2019-04-03T06:47:15Z | |
| dc.date.issued | 2005-01-01 | en_US |
| dc.description.abstract | 1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C. | en_US |
| dc.identifier.doi | 10.1117/12.583286 | en_US |
| dc.identifier.isbn | 0-8194-5711-6 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | Vertical-Cavity Surface-Emitting Lasers IX | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.583286 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150725 | |
| dc.identifier.wosnumber | WOS:000228822800019 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | strain-compensated | en_US |
| dc.subject | high-speed electronics | en_US |
| dc.subject | VCSELs | en_US |
| dc.subject | InGaAsP/InGaP | en_US |
| dc.subject | proton-implant | en_US |
| dc.title | Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers | en_US |
| dc.type | Proceedings Paper | en_US |