光資訊關鍵性材料製程與性質研究---子計畫V：用晶圓接合與溼式蝕刻方式來剝離側向覆蓋生長之氮化鎵磊晶層(II)
| dc.contributor.author | 吳耀銓 | en_US |
| dc.contributor.author | YEWCHUNG SERMONWU | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:33:25Z | |
| dc.date.available | 2014-12-13T10:33:25Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC92-2216-E009-012 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=828332&docId=156981 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/92055 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 光資訊關鍵性材料製程與性質研究---子計畫V：用晶圓接合與溼式蝕刻方式來剝離側向覆蓋生長之氮化鎵磊晶層(II) | zh_TW |
| dc.title | Lift off GaN Epitaxy Lateral Overgrowth Layer by Wafer Bonding and Wet Etching Methods (II) | en_US |
| dc.type | Plan | en_US |