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奈米熱電裝置的製造方法

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200935635zh_TW
dc.contributor.author朝春光en_US
dc.contributor.author陳蓉萱en_US
dc.contributor.author楊大緯en_US
dc.date.accessioned2014-12-16T06:12:52Z
dc.date.available2014-12-16T06:12:52Z
dc.date.issued2009-08-16en_US
dc.description.abstract本發明係揭露一種奈米熱電裝置的製造方法,提供至少一模板,而該模板具有一組奈米孔洞,在模板底部形成一基板之後,將一半導體之熔融金屬液注入該組奈米孔洞中,以形成一組半導體奈米線,再來去除該基板,以得到一半導體奈米線陣列,最後利用一金屬導體以串聯方式連結至少二半導體奈米線陣列,形成熱電元件,此熱電元件係具有較高的熱電轉換效率。zh_TW
dc.identifier.govdocH01L035/34zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/103851
dc.language.isozh_TWen_US
dc.title奈米熱電裝置的製造方法zh_TW
dc.typePatentsen_US

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