ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION

dc.citation.woscount	0	en_US
dc.contributor.author	Tsai, Jung-Ruey	en_US
dc.contributor.author	Chang, Yi-Sheng	en_US
dc.contributor.author	Wei, Kuo-Shu	en_US
dc.contributor.author	Wen, Ting-Ting	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.date.accessioned	2017-04-21T06:48:27Z
dc.date.available	2017-04-21T06:48:27Z
dc.date.issued	2015	en_US
dc.description.abstract	This work proposed the normally-off gate-recessed AlGaN/GaN high electron mobility transistors (HEMTs) with more suitable threshold voltages by adjusting the Al mole fraction in the various AlGaN layer thickness under the gate region. It is found that the slope of threshold voltage versus Al mole fraction curves is decreased with decreasing the thickness of AlGaN layer due to the decrease of piezoelectric effect on 2DEG concentration.	en_US
dc.identifier.isbn	978-1-4799-4208-4	en_US
dc.identifier.issn	2378-8593	en_US
dc.identifier.journal	2015 International Symposium on Next-Generation Electronics (ISNE)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/136066
dc.identifier.wosnumber	WOS:000380530500047	en_US
dc.language.iso	en_US	en_US
dc.subject	AlGaN	en_US
dc.subject	GaN	en_US
dc.subject	HEMT	en_US
dc.subject	threshold voltage	en_US
dc.title	ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION	en_US
dc.type	Proceedings Paper	en_US

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