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Large emitting area GaN based light emitting diode fabricated on conducting copper substrates

dc.citation.epage283en_US
dc.citation.spage282en_US
dc.contributor.authorChu, JTen_US
dc.contributor.authorLiang, WDen_US
dc.contributor.authorChu, CFen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:25:47Z
dc.date.available2014-12-08T15:25:47Z
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8557-8en_US
dc.identifier.issn1092-8081en_US
dc.identifier.journal2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/18217
dc.identifier.wosnumberWOS:000225390900140
dc.language.isoen_USen_US
dc.titleLarge emitting area GaN based light emitting diode fabricated on conducting copper substratesen_US
dc.typeProceedings Paperen_US

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