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學術出版;;Publications
研究計畫;;Research Plans
寬能隙半導體材料及其結構之時域解析光譜之研究
寬能隙半導體材料及其結構之時域解析光譜之研究
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892112M009013.pdf
(49.94 KB)
Date
2000
Authors
陳文雄
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Abstract
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Keywords
時域解析之冷激光光譜
,
氮化鎵
,
硫化鋅
,
量子井
,
量子點結構
,
載子輻射
,
非輻射復合
,
Time resolved photoluminescence
,
InGaN/GaN
,
ZnS
,
Quantum well
,
Quantum dot
,
Recombination of electron and hole
,
Radiative/nonradiative recombination
,
Carrier life time
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=523807&docId=95142
https://ir.lib.nycu.edu.tw/handle/11536/88933
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