THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2O
| dc.citation.epage | 406 | en_US |
| dc.citation.spage | 403 | en_US |
| dc.contributor.author | SUN, SC | en_US |
| dc.contributor.author | CHANG, HY | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:27:57Z | |
| dc.date.available | 2014-12-08T15:27:57Z | |
| dc.date.issued | 1993 | en_US |
| dc.identifier.isbn | 2-86332-135-8 | en_US |
| dc.identifier.journal | ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20220 | |
| dc.identifier.wosnumber | WOS:A1993BB18A00079 | |
| dc.language.iso | en_US | en_US |
| dc.title | THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2O | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: