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CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers

dc.citation.epage535en_US
dc.citation.spage534en_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKno, Tsung-Tingen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorKao, Chib-Chiangen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:03:32Z
dc.date.available2014-12-08T15:03:32Z
dc.date.issued2008en_US
dc.description.abstractWe demonstrated CW laser operation of GAN-based VCSELs under current injection at 77K. CW laser action was achieved at a threshold current of 1.4mA, emitting at 462nm with a narrow linewidth of about 0.15nm. (c) 2008 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-859-9en_US
dc.identifier.journal2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2074
dc.identifier.wosnumberWOS:000260498400268
dc.language.isoen_USen_US
dc.titleCW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasersen_US
dc.typeProceedings Paperen_US

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