The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots

Abstract

In this work, we demonstrate the Luminescent Down Shifting (LDS) effect of the single-junction GaAs solar cell with 514 nm Perovskite quantum dots with and without bake treatment. One of results shows that Jsc from 22.22 mA/cm(2) to 23.38 mA/cm(2) and the efficiency from 17.70% to 18.96% as high as 5.22% and 7.12% enhancement. The enhancement includes antireflection and LDS effect, via our calculated the increase J. from LDS effect was 31.65% Further storage lifetime test shows great reliability from these devices can be expected.