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Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser

dc.citation.epage121en_US
dc.citation.spage116en_US
dc.citation.volume3929en_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorLiao, CCen_US
dc.contributor.authorLan, YPen_US
dc.contributor.authorWang, SCen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:27:02Z
dc.date.available2014-12-08T15:27:02Z
dc.date.issued2000en_US
dc.description.abstractA systematic investigation on a series of Nd:YVO4 crystals with different dopant concentrations is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power: The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments, Based onthe analysis, we demonstrate a compact and efficient diode-end-pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 2 I-W of average power at a pulse repetition rate of 100 kHz and similar to 1.1-m pulse energy at a pulse repetition rate of 10 kHz were produced.en_US
dc.identifier.doi10.1117/12.382755en_US
dc.identifier.isbn0-8194-3546-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.journalSOLID STATE LASERS IXen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.382755en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19245
dc.identifier.wosnumberWOS:000087374600014
dc.language.isoen_USen_US
dc.subjectthermal fractureen_US
dc.subjectend-pumpeden_US
dc.subjectNd-doped laseren_US
dc.subjectQ-switcheden_US
dc.titleDesign of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laseren_US
dc.typeProceedings Paperen_US

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