<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

次7奈米鰭式元件世代新穎元件架構與通道材料之開發( I )

dc.contributor.author簡昭欣zh_TW
dc.contributor.authorChien Chao-Hsinen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2016-03-28T08:17:41Z
dc.date.available2016-03-28T08:17:41Z
dc.date.issued2015en_US
dc.description.sponsorship科技部zh_TW
dc.identifier.govdocMOST104-2119-M009-008zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11481720&docId=463840en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/130322
dc.language.isozh_TWen_US
dc.title次7奈米鰭式元件世代新穎元件架構與通道材料之開發( I )zh_TW
dc.titleExploration of Novel Device Structure and New Channel Material for Sub-7nm Technology Node FinFET( I )en_US
dc.typePlanen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: