Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy
| dc.citation.epage | 623 | en_US |
| dc.citation.spage | 622 | en_US |
| dc.contributor.author | Wang, SD | en_US |
| dc.contributor.author | Chang, MN | en_US |
| dc.contributor.author | Chen, CY | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:22Z | |
| dc.date.available | 2014-12-08T15:25:22Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | Scanning capacitance microscopy (SCM) was employed to observe the oxide breakdown sites. The localized breakdown spots obviously exhibit low differential capacitance signals. The observed area of the breakdown spots approximately ranges from 6 nm to 13 nm in lateral direction. According to contact-mode atomic force microscopy (AFM) image, the surface morphology has little effect on the SCM signal. | en_US |
| dc.identifier.doi | 10.1109/RELPHY.2005.1493173 | en_US |
| dc.identifier.isbn | 0-7803-8803-8 | en_US |
| dc.identifier.journal | 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.2005.1493173 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17751 | |
| dc.identifier.wosnumber | WOS:000230058000120 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy | en_US |
| dc.type | Proceedings Paper | en_US |