DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120305991 | zh_TW |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.author | HSU HENG-TUNG | en_US |
| dc.date.accessioned | 2014-12-16T06:15:04Z | |
| dc.date.available | 2014-12-16T06:15:04Z | |
| dc.date.issued | 2012-12-06 | en_US |
| dc.description.abstract | A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage. | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105109 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF | zh_TW |
| dc.type | Patents | en_US |