Method for eliminating crosstalk in a metal programmable read only memory

Abstract

The present invention provides a method for eliminating crosstalk (coupling noise) in a metal programmable read only memory. The metal programmable read only memory comprises a plurality of bit lines, a plurality of word lines, a plurality of precharge transistors, and a plurality of clamp transistors. When one of the bit lines is selected, bit lines adjacent to the selected bit line are fixed to a voltage value (VDD, GND or other voltages) by the clamp transistors. The clamping method can not cause voltage drops to the adjacent bit lines, and the crosstalk on the selected bit line can be eliminated simultaneously, so that the problem of read failures caused by the crosstalk in the high-speed metal programmable read only memory can be solved, and a higher speed can be reached.