Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations
| dc.citation.epage | 70 | en_US |
| dc.citation.spage | 69 | en_US |
| dc.contributor.author | Wu, Yu-Sheng | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:22Z | |
| dc.date.available | 2014-12-08T15:25:22Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (V(th)) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the V(th) variation, | en_US |
| dc.identifier.doi | 10.1109/ASSCC.2009.5357181 | en_US |
| dc.identifier.isbn | 978-1-4244-4256-0 | en_US |
| dc.identifier.journal | 2009 IEEE INTERNATIONAL SOI CONFERENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/ASSCC.2009.5357181 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17748 | |
| dc.identifier.wosnumber | WOS:000276151400030 | |
| dc.language.iso | en_US | en_US |
| dc.title | Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations | en_US |
| dc.type | Proceedings Paper | en_US |
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