Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate length

Abstract

We have modeled the as-measured and de-embedded NFmin on multi-fingers 0.13 mum node MOSFETs. In contrast to the as-measured large NFmin value and strong dependence on parallel gate fingers, the de-embedded NFmin. has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of R(g)g(m) and drain hot carrier noise but both have weak dependence on finger numbers.