雙位元儲存氮化矽快閃式記憶元件技術及可靠性(III)
| dc.contributor.author | 汪大暉 | en_US |
| dc.contributor.author | WANG TAHUI | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:31:01Z | |
| dc.date.available | 2014-12-13T10:31:01Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC94-2215-E009-004 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1143833&docId=219363 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/90632 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 雙位元儲存氮化矽快閃式記憶元件技術及可靠性(III) | zh_TW |
| dc.title | Dual-Bit Storage Nitride Trap Flash Memory Device Technology and Reliability(III) | en_US |
| dc.type | Plan | en_US |