CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120113561 | zh_TW |
| dc.contributor.author | Chin Albert | en_US |
| dc.date.accessioned | 2014-12-16T06:15:13Z | |
| dc.date.available | 2014-12-16T06:15:13Z | |
| dc.date.issued | 2012-05-10 | en_US |
| dc.description.abstract | The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric. | zh_TW |
| dc.identifier.govdoc | H01G004/06 | zh_TW |
| dc.identifier.govdoc | B23K026/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105185 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME | zh_TW |
| dc.type | Patents | en_US |