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閘極介電結構及其在有機薄膜電晶體之應用

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI300273zh_TW
dc.contributor.author陳方中en_US
dc.contributor.author莊喬舜en_US
dc.contributor.author林永昇en_US
dc.date.accessioned2014-12-16T06:16:59Z
dc.date.available2014-12-16T06:16:59Z
dc.date.issued2008-08-21en_US
dc.description.abstract一種閘極介電結構及其在有機薄膜電晶體之應用,乃將有機無機複合層與有機絕緣層構成閘極介電結構,並可將此閘極介電結構應用在有機薄膜電晶體等電子元件,由於閘極介電結構之有機無機複合層是以有機絕緣材料為基底並摻有經表面修飾之無機微粒子,可達到高介電,並藉由有機絕緣層對於有機無機複合層表面之修飾,不但可以抑制漏電流,還可幫助元件形成規則晶格排列的有機半導體層,以提昇元件的載子遷移率,因此,元件的輸出電流可以提高,且元件的效能也被大幅增進。zh_TW
dc.identifier.govdocH01L029/786zh_TW
dc.identifier.govdocH01L051/00zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106220
dc.language.isozh_TWen_US
dc.title閘極介電結構及其在有機薄膜電晶體之應用zh_TW
dc.typePatentsen_US

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