Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications

dc.citation.epage	368	en_US
dc.citation.spage	367	en_US
dc.contributor.author	Pan, CL	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:27:12Z
dc.date.available	2014-12-08T15:27:12Z
dc.date.issued	1999	en_US
dc.description.abstract	GaAs bombarded with; arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz.	en_US
dc.identifier.isbn	0-7803-5807-4	en_US
dc.identifier.journal	1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/19434
dc.identifier.wosnumber	WOS:000089938100084
dc.language.iso	en_US	en_US
dc.subject	arsenic-ion-implanted GaAs	en_US
dc.subject	multiple dosage	en_US
dc.subject	photoconductive switch	en_US
dc.subject	picosecond	en_US
dc.subject	millimeter wave	en_US
dc.title	Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications	en_US
dc.type	Proceedings Paper	en_US

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