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頂閘極型電晶體陣列基板

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberM421516zh_TW
dc.contributor.author鄭晃忠en_US
dc.contributor.author黃昱智en_US
dc.contributor.author楊柏宇en_US
dc.contributor.author姜信銓en_US
dc.contributor.author李懷安en_US
dc.date.accessioned2014-12-16T06:16:43Z
dc.date.available2014-12-16T06:16:43Z
dc.date.issued2012-01-21en_US
dc.description.abstract一種頂閘極型電晶體陣列基板,包括一透明基板、一離子釋出層、一畫素陣列與一第一絕緣層。透明基板具有一平面,而離子釋出層配置於透明基板上,並全面性地覆蓋平面。畫素陣列配置於離子釋出層上,並包括多個電晶體與多個畫素電極。各個電晶體包括一源極、一汲極、一閘極與一金氧半導體層。汲極、源極與金氧半導體層皆配置於離子釋出層上,而這些畫素電極分別電性連接這些汲極。閘極配置於金氧半導體層的上方,而第一絕緣層配置於這些金氧半導體層與這些閘極之間。金氧半導體層接觸離子釋出層。離子釋出層能釋出多個離子至金氧半導體層。zh_TW
dc.identifier.govdocG02F001/1368zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/106039
dc.language.isozh_TWen_US
dc.title頂閘極型電晶體陣列基板zh_TW
dc.typePatentsen_US

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