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A 6 similar to 10-GHz ultra-WideBand tunable LNA

dc.citation.epage5102en_US
dc.citation.spage5099en_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorKuo, CNen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:25:24Z
dc.date.available2014-12-08T15:25:24Z
dc.date.issued2005en_US
dc.description.abstractIn this paper a CMOS low noise amplifier (LNA) is designed with tunable output over an ultra-wideband. The cascode configuration is employed in this circuit, with the inductive source degeneration (ISD) and a three-section band-pass Chebyshev filter to achieve broadband input impedance matching. A source follower acts as the buffer stage for broadband output impedance matching. Signal output is band-tunable over the frequency range from 6-GHz to MGM. The circuit is fabricated in a standard 0.18um CMOS process. Circuit performance achieves maximum power gain, S21, of 11.6 dB, the input return loss, S11, better than 9 dB, and the best noise figure of 4.2dB. The circuit consumes power of 11.6mW.en_US
dc.identifier.isbn0-7803-8834-8en_US
dc.identifier.issn0271-4302en_US
dc.identifier.journal2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17796
dc.identifier.wosnumberWOS:000232002404231
dc.language.isoen_USen_US
dc.titleA 6 similar to 10-GHz ultra-WideBand tunable LNAen_US
dc.typeProceedings Paperen_US

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