具有奈米尺寸通道之蕭特基薄膜電晶體元件研製與分析

dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
dc.date.accessioned	2014-12-13T10:33:21Z
dc.date.available	2014-12-13T10:33:21Z
dc.date.issued	2003	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC92-2215-E009-062	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=873546&docId=167358	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/92013
dc.language.iso	zh_TW	en_US
dc.title	具有奈米尺寸通道之蕭特基薄膜電晶體元件研製與分析	zh_TW
dc.title	Fabrication and Characterization of Schottky Barrier Poly-Si Thin-Film Transistors with Nano-Scale Channel	en_US
dc.type	Plan	en_US

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