Super leakage current cut-off device for ternary content addressable memory
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07616469 | zh_TW |
| dc.contributor.author | Huang | en_US |
| dc.contributor.author | Po-Tsang | en_US |
| dc.contributor.author | Liu | en_US |
| dc.contributor.author | Wen-Yen | en_US |
| dc.contributor.author | Hwang | en_US |
| dc.contributor.author | Wei | en_US |
| dc.date.accessioned | 2014-12-16T06:14:27Z | |
| dc.date.available | 2014-12-16T06:14:27Z | |
| dc.date.issued | 2009-11-10 | en_US |
| dc.description.abstract | A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells. | zh_TW |
| dc.identifier.govdoc | G11C005/14 | zh_TW |
| dc.identifier.govdoc | G11C015/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104737 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Super leakage current cut-off device for ternary content addressable memory | zh_TW |
| dc.type | Patents | en_US |