A New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devices
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Huang, Wei-Cheng | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T06:04:21Z | |
| dc.date.available | 2019-04-02T06:04:21Z | |
| dc.date.issued | 2018-01-01 | en_US |
| dc.description.abstract | This work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures. | en_US |
| dc.identifier.issn | 1930-8868 | en_US |
| dc.identifier.journal | 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150743 | |
| dc.identifier.wosnumber | WOS:000444900700021 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | A New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devices | en_US |
| dc.type | Proceedings Paper | en_US |
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