Method for forming required pattern on semiconductor substrate by thermal reflow technique
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20100159708 | zh_TW |
| dc.contributor.author | Chang, Yi Edward | en_US |
| dc.contributor.author | Chang, Chia-Ta | en_US |
| dc.contributor.author | Hsiao, Shih-Kuang | en_US |
| dc.date.accessioned | 2014-12-16T06:15:34Z | |
| dc.date.available | 2014-12-16T06:15:34Z | |
| dc.date.issued | 2010-06-24 | en_US |
| dc.description.abstract | The invention is disclosed that pattern on semiconductor substrate is fabricated by thermal reflow technique. Also, the pattern on semiconductor substrate having different sub-micron spacings can be fabricated by using different time for the thermal reflow technique process. | zh_TW |
| dc.identifier.govdoc | H01L021/3065 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105397 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for forming required pattern on semiconductor substrate by thermal reflow technique | zh_TW |
| dc.type | Patents | en_US |