Stable and Efficient Organic Light Emitting Diodes Based on a Single Host of p-doped and n-doped Layers

dc.citation.epage	506	en_US
dc.citation.spage	503	en_US
dc.contributor.author	Ho, Meng-Huan	en_US
dc.contributor.author	Hsieh, Ming-Ta	en_US
dc.contributor.author	Chen, Jenn-Fang	en_US
dc.contributor.author	Lin, Kuan-Heng	en_US
dc.contributor.author	Chen, Chin H.	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.date.accessioned	2014-12-08T15:41:47Z
dc.date.available	2014-12-08T15:41:47Z
dc.date.issued	2009	en_US
dc.description.abstract	A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9, 10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO(3)) into MADN and 15% cesium carbonate (Cs2CO(3)) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p- and n-doped carrier transport layers.	en_US
dc.identifier.journal	2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/28410
dc.identifier.wosnumber	WOS:000272997600132
dc.language.iso	en_US	en_US
dc.title	Stable and Efficient Organic Light Emitting Diodes Based on a Single Host of p-doped and n-doped Layers	en_US
dc.type	Proceedings Paper	en_US

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